Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2⁢Te3 grown on europium iron garnet

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/90614

題名:	Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2⁢Te3 grown on europium iron garnet
作者:	Wong, J.-F. Chen, K.-H., M. Chia, J.-M. Huang, Z.-P. Wang, S.-X. Chen, P.-T. Young, L., B. Lin, Y.-H., G. Lee, S.-F. Mou, C.-Y. Hong, M. Kwo, J.
公開日期:	2024-01-26
關聯:	Physical Review B 109(2), 024432
URI:	http://ir.sinica.edu.tw/handle/201000000A/90614
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2469-9950&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1103/physrevb.109.024432
顯示於：	物理研究所

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