High photoresponsivity MoS2 phototransistor through enhanced hole trapping HfO2 gate dielectric

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/90230

Title:	High photoresponsivity MoS2 phototransistor through enhanced hole trapping HfO2 gate dielectric
Authors:	Pei-Xuan Long Yung-Yu La Pei-Hao Kang Chi-Huang Chuang Yuh-Jen Cheng
Issue Date:	2023-10-26
Relation:	NANOTECHNOLOGY 35, 025204
URI:	http://ir.sinica.edu.tw/handle/201000000A/90230
URL:	https://iopscience.iop.org/article/10.1088/1361-6528/ad01c2/pdf
Appears in Collections:	應用科學研究中心

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