http://ir.sinica.edu.tw/handle/201000000A/85189
題名: | Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device | 作者: | Chen, Wei-Chen Chuang, Chiashain Wang, Tian-Hsin Yeh, Ching-Chen Chen, Sheng-Zong Sakanashi, Kohei Kida, Michio Lin, Li-Hung Lee, Po-Han Wu, Po-Chen Wang, Sheng-Wen Watanabe, Kenji Taniguchi, Takashi Hsieh, Ya-Ping Aoki, Nobuyuki Liang, Chi-Te |
公開日期: | 2022-08 | 關聯: | 2D Materials 9(4):045015 | URI: | http://ir.sinica.edu.tw/handle/201000000A/85189 | ISSN: | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2053-1583&DestApp=JCR&RQ=IF_CAT_BOXPLOT | URL: | http://dx.doi.org/10.1088/2053-1583/ac70e1 |
顯示於: | 原子與分子科學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。