Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/85189

Title:	Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device
Authors:	Chen, Wei-Chen Chuang, Chiashain Wang, Tian-Hsin Yeh, Ching-Chen Chen, Sheng-Zong Sakanashi, Kohei Kida, Michio Lin, Li-Hung Lee, Po-Han Wu, Po-Chen Wang, Sheng-Wen Watanabe, Kenji Taniguchi, Takashi Hsieh, Ya-Ping Aoki, Nobuyuki Liang, Chi-Te
Issue Date:	2022-08
Relation:	2D Materials 9(4):045015
URI:	http://ir.sinica.edu.tw/handle/201000000A/85189
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2053-1583&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1088/2053-1583/ac70e1
Appears in Collections:	原子與分子科學研究所

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