http://ir.sinica.edu.tw/handle/201000000A/84747
題名: | Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor | 作者: | C. Y. Li C. C. Liu W. C. Lai Y. C. Lan Y. C. Chang |
公開日期: | 2021-05 | 關聯: | Advanced Science 8(13), 2100362 | URI: | http://ir.sinica.edu.tw/handle/201000000A/84747 | ISSN: | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2198-3844&DestApp=JCR&RQ=IF_CAT_BOXPLOT | URL: | http://dx.doi.org/10.1002/advs.202100362 |
顯示於: | 應用科學研究中心 |
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