Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/77693

題名:	Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors
作者:	Yann-Wen Lan Po-Chun Chen Yun-Yan Lin Ming-Yang Li Lain-Jong Li Yu-Ling Tu Fu-Liang Yang Min-Cheng Chen Kai-Shin Li
公開日期:	2019-01
關聯:	Nanoscale Horizons 4(3), 683-688
URI:	http://ir.sinica.edu.tw/handle/201000000A/77693
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2055-6756&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	https://pubs.rsc.org/en/content/articlelanding/2019/nh/c8nh00419f#!divAbstract
顯示於：	應用科學研究中心

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