Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/77633

Title:	Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
Authors:	Chin-I Wang Teng-Jan Chang Chun-Yuan Wang Jing-Jong Shyue Hsin-Chih Lin Miin-Jang Chen
Issue Date:	2019
Relation:	RSC Advances 9(2), 592-598
URI:	http://ir.sinica.edu.tw/handle/201000000A/77633
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2046-2069&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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