http://ir.sinica.edu.tw/handle/201000000A/77633
題名: | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices | 作者: | Chin-I Wang Teng-Jan Chang Chun-Yuan Wang Jing-Jong Shyue Hsin-Chih Lin Miin-Jang Chen |
公開日期: | 2019 | 關聯: | RSC Advances 9(2), 592-598 | URI: | http://ir.sinica.edu.tw/handle/201000000A/77633 | ISSN: | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2046-2069&DestApp=JCR&RQ=IF_CAT_BOXPLOT |
顯示於: | 應用科學研究中心 |
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