Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1–xS2

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/73902

題名:	Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1–xS2
作者:	K. C. Chen C. Y. Jian Y. J. Chen S. C. Lee S. W. Chang S. Y. Lin
公開日期:	2018-07
關聯:	ACS APPLIED MATERIALS & INTERFACES 10(29), 24733-24738
URI:	http://ir.sinica.edu.tw/handle/201000000A/73902
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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