Boosting zT above 2.5: Temperature-Induced Valence Band Mediation in GeTe-rich Ge-Sb-Te Thin Film

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/73635

Title:	Boosting zT above 2.5: Temperature-Induced Valence Band Mediation in GeTe-rich Ge-Sb-Te Thin Film
Authors:	D. P Wong M. Aminzare C.S. Pang B.K. Chang H.T. Lien S.T. Chang C.H. Chien Y.Y. Chen M.W. Chu Y.W. Yang W.P. Hsieh G. Rogl P. Rogl M.Y. Chou L.C. Chen K.H. Chen
Issue Date:	2018
Relation:	Energy and Environmental Sciences
URI:	http://ir.sinica.edu.tw/handle/201000000A/73635
Appears in Collections:	原子與分子科學研究所

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