Growth of a predicted two-dimensional topological insulator based on InBi-Si(111)-
7×7

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/73544

題名:	Growth of a predicted two-dimensional topological insulator based on InBi-Si(111)- 7×7
作者:	Hsu, Chia-Hsiu Huang, Zhi-Quan Lin, Cho-Ying Macam, Gennevieve M. Huang, Yu-Zhang Lin, Deng-Sung Chiang, Tai Chang Lin, Hsin Chuang, Feng-Chuan Huang, Li
公開日期:	2018
關聯:	Physical Review B 98(12), 121404
URI:	http://ir.sinica.edu.tw/handle/201000000A/73544
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=2469-9950&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1103/physrevb.98.121404
顯示於：	物理研究所

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