Growth and Electronic Properties of Sputtered Ni–NiO Films as a Potential Resistive Memory

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/48645

Title:	Growth and Electronic Properties of Sputtered Ni–NiO Films as a Potential Resistive Memory
Authors:	W. L. Jang Y. M. Lu C. L. Dong W. S. Hwang P. H. Hsieh C. L. Chen T. S. Chan
Issue Date:	2013
Relation:	Science of Advanced Materials 5, 1-8
URI:	http://ir.sinica.edu.tw/handle/201000000A/48645
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1947-2935&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	物理研究所

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