http://ir.sinica.edu.tw/handle/201000000A/47269
DC Field | Value | Language |
---|---|---|
dc.contributor | 物理研究所 | - |
dc.contributor.author | Liang, J. H. | - |
dc.contributor.author | Sang, Y. J. | - |
dc.contributor.author | Wang, C. -H. | - |
dc.contributor.author | Wang, T. W. | - |
dc.contributor.author | Hsu, J. Y. | - |
dc.contributor.author | Niu, H. | - |
dc.contributor.author | Tseng, M. S. | - |
dc.date.accessioned | 2020-10-27T03:32:14Z | - |
dc.date.available | 2020-10-27T03:32:14Z | - |
dc.date.issued | 2005 | - |
dc.identifier.uri | http://ir.sinica.edu.tw/handle/201000000A/47269 | - |
dc.description.sponsorship | 物理研究所 | - |
dc.language.iso | en | - |
dc.relation.ispartof | Nuclear Instruments and Methods in Phys. Research B237, 312-317 | - |
dc.title | Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation | - |
dc.type | journal article | - |
dc.description.note | 已出版;有審查制度;具代表性 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en | - |
Appears in Collections: | 物理研究所 |
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