Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44936

Title:	Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs
Authors:	S. Sucharitakul N. J. Goble U. R. Kumar R. Sankar Z. Bogorad F. C. Chou Y.-T. Chen X. P. A. Gao
Issue Date:	2015-04
Relation:	NANO LETTERS 10(6), 3815-3819
URI:	http://ir.sinica.edu.tw/handle/201000000A/44936
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1530-6984&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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