Focused ion beam induced nanowelding and defect doping as a building block for nanoscale electronics in GaN nanowires

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44735

題名:	Focused ion beam induced nanowelding and defect doping as a building block for nanoscale electronics in GaN nanowires
作者:	S. Dhara L. C. Yao C. T. Wu C. W. Hsu W. S. Tu K. H. Chen Y. L. Wang L. C. Chen
公開日期:	2010
關聯:	JOURNAL OF PHYSICAL CHEMISTRY C 114, 15260-15265
URI:	http://ir.sinica.edu.tw/handle/201000000A/44735
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1932-7447&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	原子與分子科學研究所

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