http://ir.sinica.edu.tw/handle/201000000A/44311
題名: | Band Gap Engineering of Chemical Vapor Deposited Graphene by in-situ BN Doping | 作者: | Chang, Cheng-Kai Kataria, Satender Kuo, Chun-Chiang Ganguli, Abhijit Wang, Bo-Yao Hwang, Jeong-Yuan Huang, Kay-Jay Yang, Wei-Hsun Wang, Sheng-Bo Chuang, Cheng-Hao Chen, Mi Huang, Ching-I Pong, Way-Faung Song, Ker-Jar Chang, Shoou-Jinn Guo, Jinghua Tai, Yian Tsujimoto, Masahiko Isoda, Seiji Chen, Chun-Wei Chen, Li-Chyong Chen, Kuei-Hsien |
公開日期: | 2012-12-01 | 關聯: | ACS Nano 7 (2),1333–1341 | URI: | http://ir.sinica.edu.tw/handle/201000000A/44311 | ISSN: | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1936-0851&DestApp=JCR&RQ=IF_CAT_BOXPLOT | URL: | http://pubs.acs.org/doi/abs/10.1021/nn3049158 |
顯示於: | 原子與分子科學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。