Effect of H-2 addition on SiCN film   growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/44051

題名:	Effect of H-2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor
作者:	Wu, J. -J. Chen, K. H. Wen, C. -Y. Chen, L. C. Yu, Y. -C. Wang, C. -W. Lin, E. -K.
公開日期:	2000
關聯:	JOURNAL OF MATERIALS CHEMISTRY 10, 783-787
URI:	http://ir.sinica.edu.tw/handle/201000000A/44051
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0959-9428&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	原子與分子科學研究所

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