Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43995

Title:	Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
Authors:	Yang, Fu-Hsiang Hwang, Jih-Sheng Yang, Ying-Jay Chen, Kuei-Hsien Wang, Jih-Hsiang
Issue Date:	2002-11
Relation:	Japanese Journal of Applied Physics 41(11B):L1321
URI:	http://ir.sinica.edu.tw/handle/201000000A/43995
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-4922&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1143/jjap.41.l1321
Appears in Collections:	原子與分子科學研究所

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