http://ir.sinica.edu.tw/handle/201000000A/43995
題名: | Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy | 作者: | Yang, Fu-Hsiang Hwang, Jih-Sheng Yang, Ying-Jay Chen, Kuei-Hsien Wang, Jih-Hsiang |
公開日期: | 2002-11 | 關聯: | Japanese Journal of Applied Physics 41(11B):L1321 | URI: | http://ir.sinica.edu.tw/handle/201000000A/43995 | ISSN: | http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-4922&DestApp=JCR&RQ=IF_CAT_BOXPLOT | URL: | http://dx.doi.org/10.1143/jjap.41.l1321 |
顯示於: | 原子與分子科學研究所 |
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