Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/43984

題名:	Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires
作者:	Dhara, S. Datta, A. Wu, C. T. Chen, K. H. Wang, Y. L. Muto, S. Tanabe, T. Shen, C. H. Hsu, C. W. Chen, L. C. Maruyama, T.
公開日期:	2005
關聯:	APPLIED PHYSICS LETTERS 86, 203119
URI:	http://ir.sinica.edu.tw/handle/201000000A/43984
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	原子與分子科學研究所

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