The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/43958

題名:	The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation
作者:	Das, C. R. Dhara, S. Hsu, H. C. Chen, L. C. Jeng, Y. R. Bhaduri, A. K. Raj, Baldev Chen, K. H. Albert, S. K.
公開日期:	2009
關聯:	JOURNAL OF RAMAN SPECTROSCOPY 40, 1881-1884
URI:	http://ir.sinica.edu.tw/handle/201000000A/43958
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0377-0486&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	原子與分子科學研究所

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