Phase-change memory devices based on gallium-doped indium oxide

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/42789

Title:	Phase-change memory devices based on gallium-doped indium oxide
Authors:	Wang, S. -L. Chen, C. -Y. Hsieh, M. -K. Lee, W. -C. Kung, A. H. Peng, L. -H.
Issue Date:	2009
Relation:	Appl. Phys. Lett. 94, 113503
URI:	http://ir.sinica.edu.tw/handle/201000000A/42789
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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