Enhancing Flash Memory Reliability by Jointly Considering Write-back Pattern and Block Endurance

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/40900

題名:	Enhancing Flash Memory Reliability by Jointly Considering Write-back Pattern and Block Endurance
作者:	Tseng-Yi Chen Yuan-Hao Chang Yuan-Hung Kuan Ming-Chang Yang Yu-Ming Chang Pi-Cheng Hsiu
公開日期:	2018-10
關聯:	ACM Transactions on Design Automation of Electronic Systems (TODAES) 23(5), 64
URI:	http://ir.sinica.edu.tw/handle/201000000A/40900
顯示於：	資訊科學研究所

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