In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34551

Title:	In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation
Authors:	Chung, Tung-Hsun Chen, Shu-Han Liao, Wen-Hsuan Lin, Shih-Yen
Issue Date:	2010-12-01
Conference:	OPT 2010 (Tainan, Taiwan : 中華民國光電學會)
URI:	http://ir.sinica.edu.tw/handle/201000000A/34551
Appears in Collections:	應用科學研究中心

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