Multilayer $MoS_2$ Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/34222

Title:	Multilayer $MoS_2$ Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio
Authors:	Chong-Rong Wu Xiang-Rui Chang Shu-Wei Chang Chung-En Chang Chao-Hsin Wu Shih-Yen Lin
Issue Date:	2015-09
Relation:	JOURNAL OF PHYSICS D-APPLIED PHYSICS 48, 435101
URI:	http://ir.sinica.edu.tw/handle/201000000A/34222
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0022-3727&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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