1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/34221

題名:	1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy
作者:	Cheng-Han Wu Hsuan-An Chen Shih-Yen Lin Chao-Hsin Wu
公開日期:	2015-08
關聯:	OPTICS LETTERS vol. 40, no. 16, pp. 3747-3749
URI:	http://ir.sinica.edu.tw/handle/201000000A/34221
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0146-9592&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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