800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33748

題名:	800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
作者:	Nowozin, T. Bonato, L. Hogner, A. Wiengarten, D. Bimberg Lin, Wei-Hsun Lin, Shih-Yen Reyner, C. J. Liang, Baolai L. Huffaker, D. L.
公開日期:	2013-02-01
關聯:	APPLIED PHYSICS LETTERS 102, 052115
URI:	http://ir.sinica.edu.tw/handle/201000000A/33748
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

顯示文件完整紀錄

上周
0

上個月

checked on 2023/1/3

檢查

TAIR相關文章