In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33733

題名:	In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation
作者:	Chung, Tung-Hsun Chen, Shu-Han Liao, Wen-Hsuan Lin, Shih-Yen
公開日期:	2010-11-01
關聯:	IEEE ELECTRON DEVICE LETTERS vol. 31, no. 11, pp. 1227-1229
URI:	http://ir.sinica.edu.tw/handle/201000000A/33733
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0741-3106&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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