The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33729

題名:	The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
作者:	Tseng, Chi-Che Chung, Tung-Hsun Mai, Shu-Cheng Chao, Kuang-Ping Lin, Wei-Hsun Lin, Shih-Yen Wu, Meng-Chyi
公開日期:	2010-05-01
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 28, no. 3, pp. C3G28-C3G31
URI:	http://ir.sinica.edu.tw/handle/201000000A/33729
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1071-1023&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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