MBE-grown high  gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/33696

Title:	MBE-grown high  gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics
Authors:	Lee, W. C. Lee, Y. J. Wu, Y. D. Chang, P. Huang, Y. L. Hsu, Y. L. Mannaerts, J. P. Lo, R. L. Chen, F. R. Maikap, S. Lee, L. S. Hsieh, W. Y. Tsai, M. J. Lin, S. Y. Gustffson, T. Hong, M. Kwo, J.
Issue Date:	2005-03-01
Relation:	Journal of crystal growth vol. 278, pp. 619-623
URI:	http://ir.sinica.edu.tw/handle/201000000A/33696
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0022-0248&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	應用科學研究中心

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