Integral and fractional charge filling in a InAs/GaAs quantum dot p–i–n diode by capacitance–voltage measurement

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33682

題名:	Integral and fractional charge filling in a InAs/GaAs quantum dot p–i–n diode by capacitance–voltage measurement
作者:	Tang, Shiang-Feng Lin, Shih-Yen Lee, Si-Chen Cherng, Ya-Tung
公開日期:	2002-02-01
關聯:	JOURNAL OF APPLIED PHYSICS vol. 91, no. 10 pp. 6700–6703
URI:	http://ir.sinica.edu.tw/handle/201000000A/33682
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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