Time-resolved photoluminescence study of InGaN/GaN multiple quantum well structures: Effect of Si doping in the barriers

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33373

題名:	Time-resolved photoluminescence study of InGaN/GaN multiple quantum well structures: Effect of Si doping in the barriers
作者:	Choi, C. K. Little, B. D. Kwon, Y. K. Lam, J. B. Gainer, H. Song, J. J. Chang, Y. C. Keller, S. Mishra, U. K. DenBaars, S. P.
公開日期:	2001
關聯:	PHYSICAL REVIEW B 64, 245339
URI:	http://ir.sinica.edu.tw/handle/201000000A/33373
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1098-0121&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

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