Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer Doping Technique

請用此 Handle URI 來引用此文件： http://ir.sinica.edu.tw/handle/201000000A/33130

題名:	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer Doping Technique
作者:	Chien, Jui-Fen Liao, Hua-Yang Yu, Sheng-Fu Lin, Ray-Ming Shiojiri, Makoto Shyue, Jing-Jong Chen, Miin-Jang
公開日期:	2013
關聯:	ACS Applied Materials & Interfaces 5 [2] 227-232
URI:	http://ir.sinica.edu.tw/handle/201000000A/33130
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1944-8244&DestApp=JCR&RQ=IF_CAT_BOXPLOT
顯示於：	應用科學研究中心

顯示文件完整紀錄

上周
0

上個月
3

checked on 2023/1/3

檢查

TAIR相關文章