Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2018 | 3D Dirac semimetal Cd3As2: A review of material properties | I. Crassee; R. Sankar; Wei-Li Lee; A. Akrap; M. Orlita | Physical Review Materials 2, 120302 | | | |
2015 | Enhanced thermoelectric performance of GeTe-rich germanium antimony tellurides through the control of composition and structure | R. Sankar; D. P. Wong; C.S. Chi; W.L. Chien; J.S. Hwang; F.C. Chou; L.C. Chen; K.H. Chen | CRYSTENGCOMM 17, 3445 | | | |
2017 | Epitaxial Growth of Vertically Stacked p-MoS2/n-MoS2 Heterostructures by Chemical Vapor Deposition for Light Emitting Devices | R. D. Nikam; P. A. Sonawane; R. Sankar; Y.-T. Chen | NANO ENERGY 32, 454-462 | | | |
2016 | High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors | R. K. Ulaganathan; Y.-Y. Lu; C.-J. Kuo; S. R. Tamalampudi; R. Sankar; K. M. Boopathi; A. Anand; K. Yadav; R. J. Mathew; C. R. Liu; F. C. Chou; Y.-T. Chen | NANOSCALE 8, 2284-2292 | | | |
2015 | Intrinsic electron mobility exceeding 103 cm2/Vs in multilayer InSe FETs | S. Sucharitakul; N. J. Goble; U. R. Kumar; R. Sankar; Z. Bogorad; F. C. Chou; Y.-T. Chen; X. P. A. Gao | NANO LETTERS 10(6), 3815-3819 | | | |
2015 | Large single crystal growth, transport property, and spectroscopic characterizations of three-dimensional Dirac semimetal Cd3As2 | R. Sankar; M. Neupane; S.-Y. Xu; C.J. Butler; I. Zeljkovic; I.P. Muthuselvam; F.-T. Huang; S.-T. Guo; S.K. Karna; M.-W. Chu; W.L. Lee; M.-T. Lin; R. Jayavel; V. Madhavan; M.Z. Hasan; F.C. Chou | Scientific reports 5, 12966 | | | |
2016 | Large transverse Hall-like signal in topological Dirac semimetal Cd3As2 | Shih-Ting Guo; R. Sankar; Yung-Yu Chien; Tay-Rong Chang; Horng-Tay Jeng; Guang-Yu Guo; F. C. Chou; Wei-Li Lee | Scientific reports 6, 27487 | | | |
2015 | Magnetic Orderings in Li2Cu(WO4)2 with Tungstate-Bridged Quasi-1D Spin-1/2 Chains | I.P. Muthuselvam; R. Sankar; V.N. Singh; G.N. Rao; W.L. Lee; G.Y. Guo; F.C. Chou | INORGANIC CHEMISTRY 54, 4303 | | | |
2014 | Room temperature agglomeration for the growth of BiTeI single crystal with giant Rashba effect | R. Sankar; I. Panneer Muthuselvam; Christopher John Butler; S.-C. Liou; B. H Chen; M.-W. Chu; W. L. Lee; Minn-Tsong Lin; R. Jayavel; F. C. Chou | CRYSTENGCOMM 16, 8678 | | | |
2016 | Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS | S. Sucharitakul; U. R. Kumar; R. Sankar; F.-C. Chou; Y.-T. Chen; C. Wang; C. He; R. He; X. P. A. Gao | NANOSCALE 8(45), 19050-19057 | | | |
2019 | Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor | C. R. P. Inbaraj; V. K. Gudelli; R. J. Mathew; R. K. Ulaganathan; R. Sankar; H. Y. Lin; H.-I Lin; Y.-M. Liao; H.-Y. Cheng; K.-H. Lin ; F. C. Chou; Y.-T. Chen ; C.-H. Lee; G.-Y. Guo; Y.-F. Chen | ACS APPLIED MATERIALS & INTERFACES 11(27), 24269-24278 | | | |
2018 | Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor | C. R. P. Inbaraj; R. J. Mathew; G. Haider; T.-P. Chen; R. K. Ulaganathan; R. Sankar; K. P. Bera; Y.-M. Liao; M. Kataria; H.-I Lin; F. C. Chou; Y.-T. Chen; C.-H. Lee; Y.-F. Chen | Nanoscale 10(39), 18642-18650 | | | |
2016 | Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates | P. Perumal; R. K. Ulaganathan; R. Sankar; Y.-M Liao; T.-M. Sun; M.-W. Chu; F. C. Chou; Y.-T. Chen; M.-H. Shih; Y.-F. Chen | ADVANCED FUNCTIONAL MATERIALS 26(21), 3630-3638 | | | |