Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2022 | Carrier Transport between 2D Material Layers: Photo-detector Applications of 2D Material Hetero-structures | Rung-Jin Chang; Po-Cheng Tsai; Po-Tsung Lee; Shih-Yen Lin | | | | |
2021 | Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS2/Graphene Heterostructures for Memory Device Applications | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | ACS Applied Materials & Interfaces 13(38), 45864-45869 | | | |
2019 | Elemental and Compound 2D Material Hetero-structures: The Investigation of van der Waals Epitaxy | Shih-Yen Lin ; Kuan-Chao Chen; Yu-Wei Zhang; Po-Cheng Tsai | | | | |
2023 | In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers | Po-Cheng Tsai; Chun-Wei Huang; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | Scientific Reports 13(1), 9197 | | | |
2020 | In-plane Gate Graphene Transistors Fabricated by Using Electron Beam Lithography | Chun-Wei Huang; Po-Cheng Tsai; Shoou-Jinn Chang; Shih-Yen Lin | | | | |
2020 | Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates | Bora Kim; Jayeong Kim; Po-Cheng Tsai; Soyeong Kwon; Eunah Kim; Seokhyun Yoon; Shih-Yen Lin ; Dong-Wook Kim | physica status solidi (a) 217(10), 2000033 | | | |
2021 | Large Surface Photovoltage of WS2/MoS2 and MoS2/WS2 Vertical Hetero-bilayers | Bora Kim; Jayeong Kim; Po-Cheng Tsai; Hyeji Choi; Seokhyun Yoon; Shih-Yen Linn ; Dong-Wook Kim | ACS Applied Electronic Materials 3(6), 2601-2606 | | | |
2022 | Layered Graphene Growth Directly on Sapphire Substrates for Applications | Che-Jia Chang; Po-Cheng Tsai; Wei-Ya Su; Chun-Yuan Huang; Po-Tsung Lee; Shih-Yen Lin | ACS Omega 7(15), 13128-13133 | | | |
2020 | Luminescence Enhancement and Dual-Color Emission of Stacked Mono-layer 2D Materials | Po-Cheng Tsai; Hon-Chin Huang; Chun-Wei Huang; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 31(36), 365702 | | | |
2022 | Memory Operations of Multi-Layer Molybdenum Disulfide Top-Gate Transistors | Bo-Hao Chen; Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | | | | |
2023 | Multi-Layer Molybdenum Disulfide Memories | Po-Cheng Tsai; Coung-Ru Yan; Bo-Hao Chen; Shoou-Jinn Chang; Shu-Wei Chang; Shih-Yen Lin | | | | |
2022 | Nanometer-thick Copper Films with Low Resistivity Grown on 2D Material Surfaces | Yu-Wei Liu; Dun-Jie Zhang; Po-Cheng Tsai; Chen-Tu Chiang; Wei-Chen Tu; Shih-Yen Lin | SCIENTIFIC REPORTS 12, 1823 | | | |
2023 | Persistent Charge Storage and Memory Operation of Top-Gate Transistors Solely Based on Two-dimensional Molybdenum Disulfide | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shu-Wei Chang ; Shih-Yen Lin | NANOTECHNOLOGY 34(30), 305701 | | | |
2022 | Revealing the interlayer van der Waals coupling of bi-layer and tri-layer MoS2 using terahertz coherent phonon spectroscopy | Peng-Jui Wang; Po-Cheng Tsai; Zih-Sian Yang; Shih-Yen Lin ; Chi-Kuang Sun | Photoacoustics 28, 100412 | | | |
2020 | Stacked 2D, 3D and Amorphous Structures for Device Applications | Shih-Yen Lin ; Kuan-Chao Chen; Yu-Wei Zhang; Po-Cheng Tsai | | | | |
2022 | Strategies for Low Contact Resistance of 2D Material Devices | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | | | | |
2022 | The Influence of Contact Metals on Epitaxially Grown Molybdenum Disulfide for Electrical and Optical Device Applications | Po-Cheng Tsai; Coung-Ru Yan; Shoou-Jinn Chang; Shih-Yen Lin | NANOTECHNOLOGY 33(50), 505205 | | | |
2019 | The Influence of Surface Polarities on The Optical Characteristics of Mono-layer MoS2 | Hon-Chin Huang; Po-Cheng Tsai; Si-Chen Lee; Shih-Yen Lin | | | | |
2019 | The Stacking of 2D Materials with Dielectrics and Top-gate 2D Transistors | Po-Cheng Tsai; Shih-Yen Lin | | | | |
2021 | Top-gate Transistors Fabricated on Epitaxially Grown Molybdenum Disulfide and Graphene Hetero-structures | Po-Cheng Tsai; Hon-Chin Huang; Chen-Tu Chiang; Chao-Hsin Wu; Shih-Yen Lin | APPLIED PHYSICS EXPRESS 14(12), 125502 | | | |