Top-gate Transistors Fabricated on Epitaxially Grown Molybdenum Disulfide and Graphene Hetero-structures

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/86232

Title:	Top-gate Transistors Fabricated on Epitaxially Grown Molybdenum Disulfide and Graphene Hetero-structures
Authors:	Po-Cheng Tsai Hon-Chin Huang Chen-Tu Chiang Chao-Hsin Wu Shih-Yen Lin
Issue Date:	2021-11
Relation:	APPLIED PHYSICS EXPRESS 14(12), 125502
URI:	http://ir.sinica.edu.tw/handle/201000000A/86232
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=1882-0778&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	https://doi.org/10.35848/1882-0786/ac3546
Appears in Collections:	應用科學研究中心

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