| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2007 | Epitaxial Growth of InN Films by Molecular-beam Epitaxy Using Hydrazoic Acid (HN3) as an Efficient Nitrogen Source | Chen, J. T.; Hsiao, C. L.; Hsu, H. C.; Wu, C. T.; Yeh, C. L.; Wei, P. C.; Chen, L. C.; Chen, K. H. | JOURNAL OF PHYSICAL CHEMISTRY A 111, 6755-6759 | | | |
| 2012 | Growth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disks | Chen, Y. T.; Tsai, W. C.; Chen, W. Y.; Hsiao, C. L.; Hsu, H. C.; Chang, W. H.; Hsu, T. M.; Chen, K. H.; Chen, L. C. | OPTICS EXPRESS 20, 16166-16173 | | | |
| 2010 | Growth orientation dependent hardness for epitaxial wurtzite InN films | Kataria, S.; Liu, T. W.; Hsiao, C. L.; Dhara, S.; Chen, L. C.; Chen, K. H.; Dash, S.; Tyagi, A. K.; Nanosci, J. | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10, 5170-5174 | | | |
| 2008 | High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment | Hsiao, C. L.; Liu, T. W.; Wu, C. T.; Hsu, H. C.; Chen, L. C.; Gällström, A.; Holtz, P.; Hsu, G. M.; Chen, K. H. | APPLIED PHYSICS LETTERS 92, 111914 | | | |
| 2010 | m-plane, (10(1)under-bar0). InN heteroepitaxied on (100)-gamma-LiAlO2 substrate: Growth orientation control and characterization of structural and optical | Hsiao, C. L.; Chen, J. T.; Hsu, H. C.; Liao, Y. C.; Tseng, P. H.; Chen, Y. T.; Feng, Z. C.; Tu, L. W.; Chou, M. C.; Chen, L. C.; Chen, K. H. | JOURNAL OF APPLIED PHYSICS 107, 073502 | | | |
| 2007 | Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors | Hsiao, C. L.; Hsu, H. C.; Chen, L. C.; Wu, C. T.; Chen, C. W.; Chen, M.; Tu, L. W.; Chen, K. H. | APPLIED PHYSICS LETTERS 91, 181912 | | | |
| 2011 | Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons | Amloy, S.; Chen, Y. -T.; Karlsson, K. F.; Chen, K. H.; Hsu, H. C.; Hsiao, C. L.; Chen, L. C.; Holtz, P. O. | PHYSICAL REVIEW B 83, 201307 | | | |
| 2012 | Polarized emission and excitonic fine structure energies of InGaN quantum dots | Karlsson, K. F.; Amloy, S.; Chen, Y. T.; Chen, K. H.; Hsu, H. C.; Hsiao, C. L.; Chen, L. C.; Holtz, P. O. | PHYSICA B-CONDENSED MATTER 407, 1553-1555 | | | |
| 2011 | Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering | Junaid, M.; Lundin, D.; Palisaitis, J.; Hsiao, C. L.; Darakchieva, V.; Jensen, J.; Persson, P. O. A.; Sandstrom, P.; Lai, W. J.; Chen, L. C.; Chen, K. H.; Helmersson, U.; Hultman, L.; Birch, J. | JOURNAL OF APPLIED PHYSICS 110, 123519 | | | |
