m-plane, (10(1)under-bar0). InN heteroepitaxied on (100)-gamma-LiAlO2 substrate: Growth orientation control and characterization of structural and optical

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43950

Title:	m-plane, (10(1)under-bar0). InN heteroepitaxied on (100)-gamma-LiAlO2 substrate: Growth orientation control and characterization of structural and optical
Authors:	Hsiao, C. L. Chen, J. T. Hsu, H. C. Liao, Y. C. Tseng, P. H. Chen, Y. T. Feng, Z. C. Tu, L. W. Chou, M. C. Chen, L. C. Chen, K. H.
Issue Date:	2010
Relation:	JOURNAL OF APPLIED PHYSICS 107, 073502
URI:	http://ir.sinica.edu.tw/handle/201000000A/43950
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0021-8979&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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