Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2011 | GaSb/GaAs Quantum Dots with Type-II Band Alignments Prepared by Molecular Beam Epitaxy for Device Applications | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Chen, Shu-Han | | | | |
2011 | Graphitic Carbon Film Formation under Ni Templates by Radiofrequency Sputtering for Transparent Electrode Applications | Lin, Meng-Yu; Sheng, Yung-Shuan; Chen, Shu-Han; Su, Ching-Yuan; Li, Lain-Jong; Lin, Shih-Yen | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 29, no. 6, pp. 061202 | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 31, no. 11, pp. 1227-1229 | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | | | | |
2011 | Painted Graphitic Carbon Films for the Application of Transparent Electrodes | Lin, Meng-Yu; Sheng, Yung-Shuan; Chen, Shu-Han; Lin, Shih-Yen | | | | |
2010 | Room-Temperature Operation Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diode | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn | APPLIED PHYSICS LETTERS vol. 96, no. 12, pp. 123503 | | | |
2010 | Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates | Lin, Shih-Yen; Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Chyi, Jen-Inn | NANOTECHNOLOGY 21 (29), 295304 | | | |
2010 | Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates | Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Lin, Shih-Yen | | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE Journal of Quantum Electronics 47 [3] 335-339 | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE JOURNAL OF QUANTUM ELECTRONICS vol. 47, no. 3, pp. 335-339 | | | |
2007 | The Influence of As4 Overpressure on The InAs/GaAs Quantum Dot Formation | Tseng, Chi-Che; Chen, Yi-Hao; Chen, Jheng-Nan; Wu, Meng-Chyi; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Shu-Han; Chyi, Jen-Inn | | | | |
2010 | The Operation Mechanisms of Type-II GaSb/GaAs Quantum-Dot Light-Emitting Diodes | Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2011 | The Transition Mechanisms of Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diodes | Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen | JOURNAL OF CRYSTAL GROWTH vol. 323, no. 1, pp. 466-469 | | | |
2010 | Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diode Operated at Room Temperature | Tseng, Chi-Che; Lin, Shih-Yen; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn | | | | |