| Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
| 2015 | 1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy | Cheng-Han Wu; Hsuan-An Chen; Shih-Yen Lin; Chao-Hsin Wu | OPTICS LETTERS vol. 40, no. 16, pp. 3747-3749 | | | |
| 2018 | Complete selenization of MoS2 to form wafer-scale and layer number controllable MoSe2 films | Yu-Wei Zhang; Jun-Yen Lee; Chao-Hsin Wu; Shih-Yen Lin | | | | |
| 2016 | Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth | Chong-Rong Wu; Xiang-Rui Chang; Tung-Wei Chu; Hsuan-An Chen; Chao-Hsin Wu; Shih-Yen Lin | NANO LETTERS 16(11), 7093-7097 | | | |
| 2023 | Highly Conductive Nanometer Gold Films Grown on MoS2 surfaces for Transparent Electrode Applications of Perovskite Solar Cells | Yu-Han Huang; Hanmandlu Chintam; Chao-Hsin Wu; Chih-Wei Chu; Shih-Yen Lin | | | | |
| 2020 | Highly Conductive Nanometer-Thick Gold Films Grown on Molybdenum Disulfide Surfaces for Interconnect Applications | Yu-Wei Zhang; Bo-Yu Wu; Kuan-Chao Chen; Chao-Hsin Wu; Shih-Yen Lin | SCIENTIFIC REPORTS 10, 14463 | | | |
| 2017 | Luminescence Enhancement and Enlarged Dirac Point Shift of $MoS_2$/Graphene Hetero-structure Photodetectors with Post-Growth Annealing Treatment | Chong-Rong Wu; Kun-Cheng Liao; Chao-Hsin Wu; Shih-Yen Lin | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 23(1), 3800105 | | | |
| 2016 | MoS2 Growth by Using Sulfurization of Molybdenum Films with Different Thicknesses | Tung-Wei Chu; Kuan-Chao Chen; Chao-Hsin Wu; Si-Chen Lee; Shih-Yen Lin | | | | |
| 2015 | Multilayer $MoS_2$ Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio | Chong-Rong Wu; Xiang-Rui Chang; Shu-Wei Chang; Chung-En Chang; Chao-Hsin Wu; Shih-Yen Lin | JOURNAL OF PHYSICS D-APPLIED PHYSICS 48, 435101 | | | |
| 2018 | Single-Crystal WSe2 Prepared by Chemical Vapor Deposition for Device Applications | Jun-Yan Li; Yu-Wei Zhang; Chao-Hsin Wu; Shih-Yen Lin | | | | |
| 2017 | The Band Alignment of Different 2D Materials: Vertical and Planar MoS2/WS2 Hetero-structures | Jui-Tse Tang; Kuan-Chao Chen; Chao-Hsin Wu; Shih-Yen Lin | | | | |
| 2016 | The Growth Mechanisms and Device Applications of Large-area MoS2 Films Prepared by Sulfurization of Pre-deposited Molybdenum on Sapphire Substrates | Chong-Rong Wu; Xiang-Rui Chang; Tung-Wei Chu; Chao-Hsin Wu; Shih-Yen Lin | | | | |
| 2021 | Top-gate Transistors Fabricated on Epitaxially Grown Molybdenum Disulfide and Graphene Hetero-structures | Po-Cheng Tsai; Hon-Chin Huang; Chen-Tu Chiang; Chao-Hsin Wu; Shih-Yen Lin | APPLIED PHYSICS EXPRESS 14(12), 125502 | | | |
| 2015 | Transferring-Free Top-Gated Graphene Transistors Fabricated on Graphene Films Directly Grown on Sapphire Substrates | Shuo Hwai; Chong-Rong Wu; Kun-Cheng Liao; Chao-Hsin Wu; Shih-Yen Lin | | | | |
| 2020 | Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures | Yu-Wei Zhang; Jun-Yan Li; Chao-Hsin Wu; Chiao-Yun Chang; Shu-Wei Chang ; Min-Hsiung Shih ; Shih-Yen Lin | SCIENTIFIC REPORTS 10, 5967 | | | |
| 2017 | Vertical 2D Crystal Hetero-structures: The Preparation, Device Application and Selective Growth | Chong-Rong Wu; Tung-Wei Chu; Chao-Hsin Wu; Shih-Yen Lin | | | | |
