Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2008 | Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection | Chou, Shu-Ting; Tseng, Chi-Che; Chen, Cheng-Nan; Lin, Wei-Hsiun; Lin, Shih-Yen; Wu, Meng-Chyi | Applied Physics Letters vol. 92, no. 25, pp. 253510 | | | |
2008 | Quantum-Well/Quantum-Dot Mixed-Mode Infrared Photodetectors Prepapred by Molecular Beam Epitaxy | Chou, Shu-Ting; Tseng, Chi-Che; Chen, Cheng-Nan; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2010 | Room-Temperature Operation Type-II GaSb/GaAs Quantum-Dot Infrared Light-Emitting Diode | Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn | APPLIED PHYSICS LETTERS vol. 96, no. 12, pp. 123503 | | | |
2008 | Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Chen, Cheng-Nan; Tseng, Chi-Che; Chen, Yi-Hao; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 20, no. 18, pp. 1575-1577 | | | |
2010 | Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates | Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Lin, Shih-Yen | | | | |
2010 | Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates | Lin, Shih-Yen; Tseng, Chi-Che; Chung, Tung-Hsun; Liao, Wen-Hsuan; Chen, Shu-Han; Chyi, Jen-Inn | NANOTECHNOLOGY 21 (29), 295304 | | | |
2007 | Structural and Optical Properties of Silicon Nanoparticles Prepared by Thermal Evaporation | Chou, Shu-Ting; Tsai, Shih-Hao; Yu, Bonnie; Hsu, Shih-Hsin; Shyue, Jing-Jong; Lin, Shih-Yen; Tseng, Chi-Che; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | | | | |
2007 | Surface Morphologies and Optical Characteristics of InAs/GaAs Quantum Dots Grown on Thin Buffer Layer and (InGa)As/GaAs Quantum Dots with different Coverage | Tseng, Chi-Che; Chen, Yi-Hao; Chen, Jheng-Nan; Wu, Meng-Chyi; Chou, Shu-Ting; Lin, Shih-Yen | | | | |
2008 | The Electronic Structures of InAs/GaAs Quantum Dots with Different Heights Determined by Photoluminescence Excitation | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | | | | |
2008 | The Influence of Antimony on The Optical Characteristics and Surface Morphologies of InAs Quantum Dots | Chung, Tung-Hsun; Tseng, Chi-Che; Mai, Shu-Chen.; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE Journal of Quantum Electronics 47 [3] 335-339 | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE JOURNAL OF QUANTUM ELECTRONICS vol. 47, no. 3, pp. 335-339 | | | |
2007 | The Influence of As4 Overpressure on The InAs/GaAs Quantum Dot Formation | Tseng, Chi-Che; Chen, Yi-Hao; Chen, Jheng-Nan; Wu, Meng-Chyi; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Shu-Han; Chyi, Jen-Inn | | | | |
2011 | The Influence of Background As on GaSb Quantum Dots | Lin, Wei-Hsun; Wu, Mong-Hsun; Wu, Shung-Yi; Tseng, Chi-Che; Lin, Shih-Yen; Wu, Mong-Chyi | | | | |
2011 | The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shug-Yi; Wu, Meng-Hsun; Lin, Shih-Yen | | | | |
2012 | The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | Physica Status Solidi C vol. 9, no. 2, pp. 314-317 | | | |
2007 | The Influence of Fermi Level Position on The Performances of Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Chen, Jheng-Nan; Tseng, Chi-Che; Chen, Yi-Hao; Wu, Meng-Chyi | | | | |
2009 | The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF APPLIED PHYSICS vol. 106, no. 5, pp. 054512 | | | |
2009 | The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Yu, Bonnie; Shyue, Jing-Jong; Tseng, Chi-Che; Chen, Cheng-Nan; Wu, Meng-Chyi; Lin, Wei | Thin Solid Films 517 [5] 1799-1802 | | | |
2008 | The Influence of Strain Accumulation on the Photoluminescence Excitation Spectra of InAs/GaAs Quantum Dots with Different InAs Coverage | Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Chen.; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |