Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2005 | High-Performance 30-Period Quantum-Dot Infrared Photodetector | Chou, Shu-Ting; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wang, Jyh-Shyang; Wu, Meng-Chyi; Chen, Jenn-Fang | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 23, no. 3 pp. 1129-1131 | | | |
2001 | High-Performance InAs/GaAs Quantum-Dot Infrared Photodetector with Single-sided Al0.3Ga0.7As Blocking Layer | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | APPLIED PHYSICS LETTERS vol. 78, no. 18, pp. 2784-2786 | | | |
2011 | High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Kung, Shu-Yen; Wu, Shug-Yi; Lin, Shih-Yen | IEEE PHOTONICS TECHNOLOGY LETTERS IEEE Photonics Technology Lett. vol. 23, no. 2, pp. 106-108 | | | |
2006 | High-Temperature Operation Normal Incident 256x256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array | Tang, Shiang-Feng; Chiang, Cheng-Der; Weng, Ping-Kuo; Gau, Yau-Tang; Ruo, Jihnn-Jye; Yang, San-Te; Shih, Chih-Chang; Lin, Shih-Yen; Lee, Si-Chen | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 18, no. 8, pp. 986-988 | | | |
2013 | Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99 | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 31, no. 11, pp. 1227-1229 | | | |
2013 | In-Plane Gate Transistors for Photodetector Applications | Liao, Yu-An; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Wen-Hao; Chyi, Jen-Inn; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 34, no. 6, pp. 780-782 | | | |
2012 | In-Plane Gate Transistors with 40 $\mu$m Wide Channel Width | Chung, Tung-Hsun; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Shu-Wei; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 33, no. 8, pp. 1129-1131 | | | |
2002 | InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) With Double Al0.3Ga0.7As Blocking Barriers | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen | IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 49, no. 8, pp. 1341–1347 | | | |
2005 | InAs/GaAs Quantum-Dot Infrared Photodetectors with Different Doping Densities | Chou, Shu-Ting; Tsai, Cheng-Shuan; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wu, Meng-Chyi | | | | |
2008 | Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 26, no. 3, pp. 956-958 | | | |
2006 | Influence of Doping Density on the Normal Incident Absorption of Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | Applied Physics Letters vol. 88, no. 17, pp. 173511 | | | |
2007 | Influence of Thin Metal Base Thickness on the Performance of CuPc Vertical Organic Triodes | Cheng, Shiau-Shin; Yang, Chuan-Yi; Chuang, You-Che; Ou, Chun-Wei; Wu, Meng-Chyi; Lin, Shih-Yen; Chan, Yi-Jen | Applied Physics Letters vol. 90, no. 15, pp. 153509 | | | |
2007 | Influences of Silicon Doping in Quantum Dot Layers on Optical Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Tsai, Cheng-Shuan; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong; Hsu, Bang-Yu; Chi, C. C. | THIN SOLID FILMS vol 515, no. 10, pp. 4459-4461 | | | |
2005 | Influences of Silicon Doping of InAs Quantum Dot Layers on Optical Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector | Huang, Chun-Yuan; Ou, Tzu-Min; Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong; Chen, Chung-Yu; Horng, Sheng-Fu; Hsu, Bang-Yu; Chi, C. C. | | | | |
2009 | InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 21, no. 18, pp. 1332-1334 | | | |
2009 | InGaAs-Capped InAs/GaAs quantum-Dot Infrared Photodetectors with 10.4 um Responses | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Chen; Lin, Shih-Yen | | | | |
2007 | InGaAs/GaAs Quantum-Dot Infrared Photodetectors for Multi-Color Detection | Chen, Jheng-Nan; Tseng, Chi-Che; Chen, Yi-Hao; Wu, Meng-Chyi; Chou, Shu-Ting; Lin, Shih-Yen | | | | |
2002 | Integral and fractional charge filling in a InAs/GaAs quantum dot p–i–n diode by capacitance–voltage measurement | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen; Cherng, Ya-Tung | JOURNAL OF APPLIED PHYSICS vol. 91, no. 10 pp. 6700–6703 | | | |