Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2000 | High Performance InAs/GaAs Quantum Dot Infrared photodetector (QDIP) Operated over 70K | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | | | | |
2009 | High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Wang, Yung-Sheng; Chang, Shoou-Jinn; Chou, Shu-Ting; Lin, Shih-Yen; Lin, Wei | JAPANESE JOURNAL OF APPLIED PHYSICS vol. 48, no. 4, pp. 04C108 | | | |
2006 | High Responsivity of InGaAs/InP Quantum-Well Infrared Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition | Chou, Shu-Ting; Chen, Shang-Fu; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2005 | High Responsivity Quantum-Dot Infrared Photodetector with Al0.1Ga0.9As Blocking Layers at Both Sides of the Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | JOURNAL OF CRYSTAL GROWTH vol. 278, pp. 351-354 | | | |
2004 | High Responsivity Quantum-Dot Infrared Photodetector with Two Al0.1Ga0.9As Blocking Layers at Both Sides of The Structure | Lin, Shih-Yen; Chi, Jim-Yong; Lee, Si-Chen | | | | |
2000 | High Temperature Operated (≧250 K) Photovoltaic- Photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen | | | | |
2010 | High Temperature Operation GaSb/GaAs Quantum dot Infrared Photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2005 | High-Performance 30-Period Quantum-Dot Infrared Photodetector | Chou, Shu-Ting; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wang, Jyh-Shyang; Wu, Meng-Chyi; Chen, Jenn-Fang | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 23, no. 3 pp. 1129-1131 | | | |
2001 | High-Performance InAs/GaAs Quantum-Dot Infrared Photodetector with Single-sided Al0.3Ga0.7As Blocking Layer | Lin, Shih-Yen; Tsai, Yau-Ren; Lee, Si-Chen | APPLIED PHYSICS LETTERS vol. 78, no. 18, pp. 2784-2786 | | | |
2011 | High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Kung, Shu-Yen; Wu, Shug-Yi; Lin, Shih-Yen | IEEE PHOTONICS TECHNOLOGY LETTERS IEEE Photonics Technology Lett. vol. 23, no. 2, pp. 106-108 | | | |
2006 | High-Temperature Operation Normal Incident 256x256 InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array | Tang, Shiang-Feng; Chiang, Cheng-Der; Weng, Ping-Kuo; Gau, Yau-Tang; Ruo, Jihnn-Jye; Yang, San-Te; Shih, Chih-Chang; Lin, Shih-Yen; Lee, Si-Chen | IEEE PHOTONICS TECHNOLOGY LETTERS vol. 18, no. 8, pp. 986-988 | | | |
2013 | Improved 1.3 $\mu$m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature | Lin, Wei-Hsun; Wang, Kai-Wei; Lin, Shih-Yen; Wu, Meng-Chyi | IEEE PHOTONICS TECHNOLOGY LETTERS 25 (1), 97-99 | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | | | | |
2010 | In-Plane Gate Transistors Fabricated by Using Atomic-Force Microscopy Anode Oxidation | Chung, Tung-Hsun; Chen, Shu-Han; Liao, Wen-Hsuan; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 31, no. 11, pp. 1227-1229 | | | |
2013 | In-Plane Gate Transistors for Photodetector Applications | Liao, Yu-An; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Wen-Hao; Chyi, Jen-Inn; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 34, no. 6, pp. 780-782 | | | |
2012 | In-Plane Gate Transistors with 40 $\mu$m Wide Channel Width | Chung, Tung-Hsun; Lin, Wei-Hsun; Chao, Yi-Kai; Chang, Shu-Wei; Lin, Shih-Yen | IEEE ELECTRON DEVICE LETTERS vol. 33, no. 8, pp. 1129-1131 | | | |
2002 | InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) With Double Al0.3Ga0.7As Blocking Barriers | Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen | IEEE TRANSACTIONS ON ELECTRON DEVICES vol. 49, no. 8, pp. 1341–1347 | | | |
2005 | InAs/GaAs Quantum-Dot Infrared Photodetectors with Different Doping Densities | Chou, Shu-Ting; Tsai, Cheng-Shuan; Lin, Shih-Yen; Hsiao, Ru-Shang; Chi, Jim-Yong; Wu, Meng-Chyi | | | | |
2008 | Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 26, no. 3, pp. 956-958 | | | |
2006 | Influence of Doping Density on the Normal Incident Absorption of Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Wu, Meng-Chyi; Lin, Shih-Yen; Chi, Jim-Yong | Applied Physics Letters vol. 88, no. 17, pp. 173511 | | | |