Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2013 | Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics | Pu, J.; Zhang, Y.; Wada, Y.; Wang, T. -W.; Li, L. -J.; Iwasa, Y.; Takenobu, T. | APPLIED PHYSICS LETTERS 103(2), 023505-1-4 |