Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/44415

Title:	Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics
Authors:	Pu, J. Zhang, Y. Wada, Y. Wang, T. -W. Li, L. -J. Iwasa, Y. Takenobu, T.
Issue Date:	2013-07-01
Relation:	APPLIED PHYSICS LETTERS 103(2), 023505-1-4
URI:	http://ir.sinica.edu.tw/handle/201000000A/44415
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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