Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2005 | Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation | Liang, J. H.; Sang, Y. J.; Wang, C. -H.; Wang, T. W.; Hsu, J. Y.; Niu, H.; Tseng, M. S. | Nuclear Instruments and Methods in Phys. Research B237, 312-317 |