http://ir.sinica.edu.tw/handle/201000000A/47269
Title: | Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation | Authors: | Liang, J. H. Sang, Y. J. Wang, C. -H. Wang, T. W. Hsu, J. Y. Niu, H. Tseng, M. S. |
Issue Date: | 2005 | Relation: | Nuclear Instruments and Methods in Phys. Research B237, 312-317 | URI: | http://ir.sinica.edu.tw/handle/201000000A/47269 |
Appears in Collections: | 物理研究所 |
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