Issue Date | Title | Author(s) | Relation | scopus | WOS | Fulltext/Archive link |
2008 | The Electronic Structures of InAs/GaAs Quantum Dots with Different Heights Determined by Photoluminescence Excitation | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | | | | |
2008 | The Influence of Antimony on The Optical Characteristics and Surface Morphologies of InAs Quantum Dots | Chung, Tung-Hsun; Tseng, Chi-Che; Mai, Shu-Chen.; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE Journal of Quantum Electronics 47 [3] 335-339 | | | |
2011 | The Influence of As on the Morphologies and Optical Characteristics of GaSb/GaAs Quantum Dots | Tseng, Chi-Che; Mai, Shu-Cheng; Lin, Wei-Hsun; Wu, Shung-Yi; Yu, Bang-Ying; Chen, Shu-Han; Lin, Shih-Yen; Shyue, Jing-Jong; Wu, Meng-Chyi | IEEE JOURNAL OF QUANTUM ELECTRONICS vol. 47, no. 3, pp. 335-339 | | | |
2007 | The Influence of As4 Overpressure on The InAs/GaAs Quantum Dot Formation | Tseng, Chi-Che; Chen, Yi-Hao; Chen, Jheng-Nan; Wu, Meng-Chyi; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Shu-Han; Chyi, Jen-Inn | | | | |
2011 | The Influence of Background As on GaSb Quantum Dots | Lin, Wei-Hsun; Wu, Mong-Hsun; Wu, Shung-Yi; Tseng, Chi-Che; Lin, Shih-Yen; Wu, Mong-Chyi | | | | |
2012 | The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shung-Yi; Wu, Meng-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | Physica Status Solidi C vol. 9, no. 2, pp. 314-317 | | | |
2011 | The Influence of Background As on GaSb/GaAs Quantum Dots and Its Application in Infrared Photodetectors | Lin, Wei-Hsun; Tseng, Chi-Che; Wu, Shug-Yi; Wu, Meng-Hsun; Lin, Shih-Yen | | | | |
2007 | The Influence of Fermi Level Position on The Performances of Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Chen, Jheng-Nan; Tseng, Chi-Che; Chen, Yi-Hao; Wu, Meng-Chyi | | | | |
2009 | The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors | Lin, Wei-Hsun; Chao, Kuang-Ping; Tseng, Chi-Che; Mai, Shu-Chen; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF APPLIED PHYSICS vol. 106, no. 5, pp. 054512 | | | |
2009 | The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors | Chou, Shu-Ting; Lin, Shih-Yen; Yu, Bonnie; Shyue, Jing-Jong; Tseng, Chi-Che; Chen, Cheng-Nan; Wu, Meng-Chyi; Lin, Wei | Thin Solid Films 517 [5] 1799-1802 | | | |
2008 | The Influence of Strain Accumulation on the Photoluminescence Excitation Spectra of InAs/GaAs Quantum Dots with Different InAs Coverage | Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Chen.; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2010 | The Operation Mechanisms of Type-II GaSb/GaAs Quantum-Dot Light-Emitting Diodes | Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2007 | The Surface Morphologies and Optical Characteristics of InGaAs/GaAs Quantum Dots | Chou, Shu-Ting; Lin, Shih-Yen; Tseng, Chi-Che; Chen, Yi-Hao; Chen, Jheng-Nan; Wu, Meng-Chyi | | | | |
2007 | The Surface Morphologies and Optical Characteristics of InGaAs/GaAs Quantum Dots with Different In Compositions Prepared by MBE | Tseng, Chi-Che; Chou, Shu-Ting; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2008 | The Temperature Dependence of Responsivities for Quantum-Well/Quantum-Dot Mixed-Mode Infrared Photodetectors | Lin, Wei-Hsun; Chou, Shu-Ting; Tseng, Chi-Che; Lin, Meng-Yu; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2008 | The Temperature-Dependent Responsivities of Quantum-Dot Infrared Photodetecors | Lin, Wei-Hsun; Chou, Shu-Ting; Tseng, Chi-Che; Lin, Meng-Yu; Chao, Kuang-Ping; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |
2010 | The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages | Tseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 28, no. 3, pp. C3G28-C3G31 | | | |
2008 | The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector | Tseng, Chi-Che; Chou, Shu-Ting; Lin, Shih-Yen; Chen, Cheng-Nan; Lin, Wei-Hsun; Chen, Yi-Hao; Chung, Tung-Hsun; Wu, Meng-Chyi | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B vol. 26, no. 6, pp. 1831-1833 | | | |
2007 | The Transition Mechanisms of InAs/GaAs Quantum-Dot Infrared Photodetectors | Chen, Cheng-Nan; Lin, Wei-Hsun; Chou, Shu-Ting; Tseng, Chi-Che; Chen, Yi-Hao; Chung, Tung-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi | | | | |