Recrystallization of epitaxial GaN under indentation

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/43896

Title:	Recrystallization of epitaxial GaN under indentation
Authors:	Dhara, S. Das, C. R. Hsu, H. C. Chen, K. H. Chen, L. C. Raj, Baldev Bhaduri, A. K. Albert, S. K. Ray, Ayan
Issue Date:	2008-04-01
Relation:	APPLIED PHYSICS LETTERS 92, 143114
URI:	http://ir.sinica.edu.tw/handle/201000000A/43896
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0003-6951&DestApp=JCR&RQ=IF_CAT_BOXPLOT
Appears in Collections:	原子與分子科學研究所

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