Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors

Please use this identifier to cite or link to this item: http://ir.sinica.edu.tw/handle/201000000A/90223

Title:	Analytical Modeling of Current Gain in Multiple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistors
Authors:	M. Kumarl L. C. Hsueh S. W. Cheng S. W. Chang C. H. Wu
Issue Date:	2023-07-10
Relation:	IEEE Transactions on Electron Devices 70(1), 343-349
URI:	http://ir.sinica.edu.tw/handle/201000000A/90223
ISSN:	http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Drexel&SrcApp=hagerty_opac&KeyRecord=0018-9383&DestApp=JCR&RQ=IF_CAT_BOXPLOT
URL:	http://dx.doi.org/10.1109/ted.2023.3289930
Appears in Collections:	應用科學研究中心

Show full item record

Check